Guest Lec­ture »Ato­mic Dif­fu­sion Bon­ding of Wafers«

In a pre­sen­ta­tion of Prof. Take­hito Shi­matsu – part­ner and visi­ting lec­tu­rer of Wafer­bond ’22 con­fe­rence –  latest rese­arch on wafer bon­ding will be discussed.

Ato­mic dif­fu­sion bon­ding (ADB) of wafers is a pro­mi­sing pro­cess to achieve room­tem­pe­ra­ture wafer bon­ding. In stan­dard ADB, thin metal films are fabri­ca­ted on two flat wafer sur­faces using sput­ter depo­si­tion, fol­lo­wed by bon­ding of the two films on the wafers in vacuum. Recently we demons­tra­ted ADB of wafers at room tem­pe­ra­ture using oxide films [1]. No inter­face cor­re­spon­ding to the ori­gi­nal film sur­face was obser­ved (Figure 1), indi­ca­ting high per­for­mance of bon­ding using Y2O3 films. Inci­dent light can pass through trans­pa­rent wafers bonded with oxide films wit­hout reduc­tion in inten­sity (Figure 2). Moreo­ver, the bonded films show a good elec­tri­cal insu­la­tion. Any mir­ror-polished wafer can be bonded using oxide films. These pro­per­ties are useful to pro­duce new opti­cal or elec­tri­cal devices. We pre­sent the tech­ni­cal poten­tial and cur­rent sta­tus of ADB using oxide films.

[1] T. Shi­matsu, H. Yoshida, M. Uomoto, T. Saito, T. Mori­waki, N. Kato, Y. Miya­moto, and
K. Miya­moto, Proc. 7th Int. Work­shop on LTB-3D, 2021, p. 51.

Lec­tu­rer Prof. Shi­matsu-san is lea­ding sci­en­tist in the field of wafer bon­ding at the Fron­tier Rese­arch Insti­tute for Inter­di­sci­pli­nary Sci­en­ces at Tohoku Uni­ver­sity of Japan. Prof. Shi­matsu is enga­ged in various orga­niza­ti­ons like the Japan Insti­tute of Elec­tro­nics Pack­a­ging, IEEE, the Magne­tics Society, the Magne­tics Society of Japan and the Japan Insti­tute of Metals and Materials.

Atten­ding the lec­ture is free of charge, indus­try part­ners, sci­en­tists and engi­neers of the pho­to­nics region of Jena are kindly invited.